Part Number Hot Search : 
MTZJ2V7 TA0175B 24D15 RCA113B CO55CC TPJNENF 201518 A473J
Product Description
Full Text Search

LET9006 - RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9006_4186333.PDF Datasheet


 Full text search : RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package


 Related Part Number
PART Description Maker
SAK-C164CI-8EM SAF-C164CI-8E25MD-STEP SAF-C164CI-8 Compact Microcontrollers for Motor-Drive applications
16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 25 MHz
16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - 64 K OTP, 2 K RAM, CAN, Drive Control Unit, 20 MHz
16-Bit Microcontrollers - 64 K ROM, 4 K RAM, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - ROMless, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz
16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, enh. Power Saving features, 20 MHz
48Kbyte ROM; 20 (25MHz) MHz; V(dd): -0.5to 6.5V; V(in): -0.5 to 0.5V; 10mA; 1.5W; 16-bit single chip microcontoller
Infineon
BLF872 BLF872-2015 UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
NXP Semiconductors
Quanzhou Jinmei Electro...
AFT21H350W03SR6 RF Power LDMOS Transistors
NXP Semiconductors
AFT26H250W03SR6 AFT26H250W03S-24S RF Power LDMOS Transistors
NXP Semiconductors
MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 RF Power LDMOS Transistors
Freescale Semiconductor, Inc
LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
RF--35 CRCW120610KOJNEA CRCW120610ROJNEA ATC100B0R RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor, Inc
LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
STMICROELECTRONICS[STMicroelectronics]
AFT21S232SR3 AFT21S230SR3 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor, Inc
LET20015 9336 From old datasheet system
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE
STMICROELECTRONICS[STMicroelectronics]
BLF4G20LS-110B From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
Philips Semiconductors
NXP Semiconductors N.V.
BLF3G21-30 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
NXP Semiconductors N.V.
 
 Related keyword From Full Text Search System
LET9006 bus LET9006 ethernet transceiver LET9006 nec LET9006 mos LET9006 image sensor
LET9006 中文 LET9006 电子元器件 LET9006 afe + homeplug av LET9006 rohm LET9006 circuit diagram
 

 

Price & Availability of LET9006

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.69455313682556